Chip breakthrough will accelerate development of self-drive - Semiconductors distributor - udn部落格
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    Chip breakthrough will accelerate development of self-drive
    2021/03/29 05:45:29
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    A new SRAM that could provide the real-time image processing capabilities for future autonomous-driving technologies has been developed by Renesas Electronics.

    By Paul Whytock | 01-09-2016

    By Robin Mitchell | 12-12-2020

    Also, a symmetrical layout structure is needed for stable operation because MOS characteristics are prone to extreme variations. In this new SRAM, Renesas has optimised the design of the peripheral circuits as SRAM for real-time image processing.

    High-temperature film capacitor series delivers longer life in harsh environments

    Chip breakthrough will accelerate development of self-drive cars

    16-12-2015 |   |  By Paul Whytock

    New Yorker Electronics now offers the Exxelia Dearborn 560P product series, delivering unsurpassed performances at high temperature. The company developed the series as a cost-effective solution for high reliability and performance in severe environments.

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    Unlike single-ported SRAM, for dual-ported SRAM there are various layout topologies for the bit cell. Although a planar MOSFET structure has been used until now in 28nm processes, Renesas has adopted a new FinFET device, which provides a fin structure that suppresses process variations in the 16nm process and improves device characteristics. This new FinFET device does have very precise layout restrictions and it is difficult to use the layout structure that was optimal for earlier planar type devices.

    However, compared to the single-ported SRAM, this dual-ported SRAM suffers from several problems, including not only requiring more chip area, but also increased power consumption when access speeds are increased, worse lower limit voltage margins, and other issues.

    The company has revealed that when testing the new SRAM in a 16nm process, it managed 688 picosecond high-speed operations within a voltage condition of 0.7V and a high-level integration density of 3.6 Mbit/mm.

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    The series gives resistance to vibrations, shocks and over-voltage making it ideal for oil and gas applications as well as aerospace, defence and civil aviation. With no derating up to 150C, this dielectric polymer film capacitor supplants high-temperature ceramics and tantalums being an excellent choice for many capacitor applications in extreme environments, such as DC link and AC filtering.


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