QLC Memory

This technology allows for dramatically increased memory sizes for the same size silicon die but it does have its drawbacks. Because flash memories pull electrons onto the floating gate via tunnelling they are somewhat destructive which results in flash memories have a maximum number of writes per cell (can be as much as 1 million but typically between 10,000 and 100,000). Flash memory technologies that employ multi-bit storage per cell suffer from this problem far worse and can have as few as 100 writes per cell. This is why these technologies are more ideal for large server farm storage (such as Youtube) where data is unlikely to be altered but needs to be stored and accessed frequently. Flash memories can be read as many times as needed but can only be written to a finite number of times. Increasing the number of bits stored onto a single memory cell also increases its access time and thus are slower memories than their single bit counterparts. This is why such memory architectures are more suited for long term storage of data (such as archives and backups). 

Technology Drawbacks

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